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IBM’s 0.7nm Nanostack Packs Nearly 100 Billion Transistors, Pushes Logic Below 1nm

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중국 Beijing Qianxing Jietong Technology Co., Ltd. 인증
중국 Beijing Qianxing Jietong Technology Co., Ltd. 인증
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—— 《Festfing DV》LLC

내가 긴급히 인텔 CPU와 토시바 SSD를 찾고 있었늘 때, 베이징 첸싱 지에통 기술 주식회사로부터의 샌디는 나에게 많은 도움을 주었고, 나에게 빨리 필요로 한 제품을 가져다 주었습니다. 나는 정말로 그녀를 압니다.

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베이징 첸싱 지에통 기술 주식회사의 샌디는 내가 서버를 구입할 때 제시간에 나에게 구성 오류를 상기시킬 수 있는 매우 주의깊은 판매원을 있습니다. 엔지니어들은 또한 매우 전문적이고, 빠르게 테스팅 프로세스를 완료할 수 있습니다.

—— 스트렐킨 미하일 블라드미로비치

베이징 첸싱지에통과의 협업에 매우 만족합니다. 제품 품질이 훌륭하고, 배송도 항상 제 시간에 이루어집니다. 영업팀은 전문적이고, 인내심이 많으며, 모든 질문에 매우 친절하게 답변해 줍니다. 그들의 지원에 진심으로 감사드리며, 장기적인 파트너십을 기대합니다. 강력 추천합니다!

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품질: 제 공급업체와의 좋은 경험. 미크로틱 RB3011은 이미 사용되었지만 매우 좋은 상태로 모든 것이 완벽하게 작동합니다. 통신은 빠르고 원활했습니다.그리고 제 모든 걱정은 빠르게 해결되었습니다.매우 신뢰할 수 있는 공급자

—— 제란 콜레시오

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IBM’s 0.7nm Nanostack Packs Nearly 100 Billion Transistors, Pushes Logic Below 1nm

June 26, 2026
IBM has unveiled an innovative 0.7nm (7-angstrom) transistor architecture, recognized as the industry’s first sub-1nm semiconductor technology. As the semiconductor sector continues to break the physical limits of conventional transistor scaling, this research achievement marks a key scientific and technological breakthrough in the industry.

최신 회사 사례 IBM’s 0.7nm Nanostack Packs Nearly 100 Billion Transistors, Pushes Logic Below 1nm  0

IBM Nanostack Technology


This experimental technology enables the integration of nearly 100 billion transistors on a fingernail-sized chip, nearly doubling the transistor density of IBM’s 2nm chip technology first launched in 2021. According to IBM, tailored to the optimization priorities of practical application scenarios, the new architecture can deliver up to 50% higher performance or up to 70% improved energy efficiency compared with the existing 2nm process.

최신 회사 사례 IBM’s 0.7nm Nanostack Packs Nearly 100 Billion Transistors, Pushes Logic Below 1nm  1

The core of this technology launch is an innovative three-dimensional transistor architecture named "nanostack", which realizes sub-1nm logic chip scaling for the first time in the industry.

Innovative 3D Nanostack Architecture


Moving beyond the traditional solution of simply shrinking transistor dimensions, this technology vertically stacks and staggers nanosheet transistors via a 3D integration process. This innovative approach not only greatly boosts transistor integration density, but also allows different materials to be deployed in each layer, enabling independent and precise optimization of chip performance and power consumption within the stacked structure.

IBM’s research team has completed experimental validation of the architecture through ultra-thin dielectric bonding for CMOS integration, dual-channel engineering optimization, and testing of fully functional CMOS inverter circuits. A series of test results have verified that the architecture is physically manufacturable and can steadily support the operation of various computational workloads.

Jay Gambetta, Director of IBM Research, stated that this breakthrough is not a simple upgrade of transistor scaling, but a disruptive innovation in chip manufacturing processes. Operating at process scales close to the atomic level, the architecture delivers simultaneous improvements in both chip performance and energy efficiency.

SRAM Scaling Optimization for AI Computing Power


At the 2026 Symposium on VLSI Technology and Circuits, IBM released another supporting research result: the nanostack architecture achieves approximately 40% SRAM scaling. For AI accelerators and high-performance computing systems, overall system performance is frequently constrained by memory bandwidth and storage capacity. Continuous improvements in memory density have therefore become increasingly critical for advanced computing applications.
These SRAM innovations empower chip designers to develop more efficient processors while addressing the growing memory requirements of generative AI, cloud infrastructure, and data-heavy workloads.

Extending the Semiconductor Technology Roadmap


While modern process nodes no longer strictly correspond to specific physical transistor dimensions, IBM’s 0.7nm technology opens up a viable path for continuous logic scaling into the angstrom era. The firm believes the nanostack methodology can sustain further transistor scaling for at least another decade beyond today’s state-of-the-art processes.

The research was jointly conducted at IBM’s semiconductor research center in Albany, New York, together with industrial partners. The facility is set to accommodate ASML’s High Numerical Aperture Extreme Ultraviolet (High NA EUV) lithography system, a pivotal technology for upcoming advanced process generations. IBM and its collaborators have already verified functional devices fabricated using High NA EUV processes.

Production Outlook


IBM continues to solidify its position as a leading semiconductor research institution, with extensive contributions covering silicon process innovation, AI hardware design, and quantum computing development. The company has recently announced the launch of Anderon, an independent quantum foundry dedicated to quantum wafer manufacturing.

Though the 0.7nm breakthrough currently remains a research achievement, IBM indicates that commercial manufacturing based on the nanostack architecture may be realized within the next five years, laying a solid foundation for mass-producible sub-1nm semiconductor technology.

Beijing Qianxing Jietong Technology Co., Ltd.
Sandy Yang/Global Strategy Director
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